BD436 TO-126C 85-375

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD434 / BD436 / BD438 TRANSISTOR (PNP) TO – 126 FEATURES z Amplifier and Switching Applications z Complement To BD433, BD435 And BD437 1. EMITTER 2. COLLECTOR 3. BASE  Equivalent Circuit BD434 z XX BD436 zXX BD438 zXX BD434,BD436,BD438 'HYLFHFoGH Solid dot = Green molding compound device, if none, the normal device ;; &ode  ORDERING INFORMATION Part Number Package Packing Method Pack Quantity BD434 TO-126 Bulk 200pcs/Bag BD436 TO-126 Bulk 200pcs/Bag BD438 TO-126 Bulk 200pcs/Bag BD434-TU TO-126 Tube 60pcs/Tube BD436-TU TO-126 Tube 60pcs/Tube BD438-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Value Unit BD434 BD436 BD438 -22 -32 -45 V BD434 BD436 BD438 Emitter-Base Voltage -22 -32 -45 -5 Collector Current –Continuous -4 A 1.25 W -55-150 ℃ Parameter Collector-Base Voltage Collector-Emitter Voltage VCEO VEBO IC PC TJ,Tstg www.jscj-elec.com Collector Power Dissipation Junction Temperature 1 V V Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol Test V(BR)CBO IC=-100μA,IE= 0 VCE(SUS)(1) IC=-100mA,IB= 0 V(BR)EBO IE=-100μA,IC=0 Collector cut-off current ICBO VCB=-22V,IE= 0 VCB=-32V,IE= 0 VCB=-45V,IE= 0 Emitter cut-off current IEBO VEB=-5V,I E=0 DC current gain Collector-emitter saturation voltage conditions hFE(1) (1) hFE(2) (1) Min BD434 BD436 BD438 BD434 BD436 BD438 Max -22 -32 -45 -22 -32 -45 85 BD434/BD436 BD438 BD434/BD436 BD438 V V -100 μA -1 mA 375 40 30 50 40 hFE(3) (1) VCE=-1V,IC=-2A VCE(sat) (1) IC=-2A,IB=-0.2A BD434/BD436 -0.5 IC=-3A,IB=-0.3A BD438 VCE=-1V,IC=-2A BD434/BD436 BD438 -0.7 -1.1 -1.2 Base-emitter voltage VBE(1) Transition frequency fT VCE=-1V,IC=-250mA Unit V -5 BD434 BD436 BD438 VCE=-1V,IC=-500mA VCE=-5V,I C=-10mA Typ 3 V V MHz (1) Pulse test. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Static Characteristic hFE COMMON EMITTER Ta=25℃ IC COMMON EMITTER VCE=-1V -5.0mA -4.5mA -875 -4.0mA -3.5mA -750 -3.0mA -625 -2.5mA -500 -2.0mA -375 Ta=100℃ hFE -1000 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) -1125 Ta=25℃ 100 -1.5mA -250 -1.0mA -125 IB=-0.5mA 0 0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VBEsat —— VCE 10 -10 -6 -100 (V) -1000 COLLECTOR CURRENT VCEsat IC -1500 —— IC IC β=10 -900 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1200 Ta=25℃ -600 Ta=100℃ -300 0 -1 -10 -100 -1000 COLLECTOR CURRENT IC —— IC Ta=100℃ -100 Ta=25℃ -10 -1 -10 -4000 (mA) -100 -1000 COLLECTOR CURRENT VBE 1000 -4000 Cob / Cib —— IC VCB / VEB COMMON EMITTER VCE=-1V f=1MHz IE=0 / IC=0 o (pF) (mA) Ta=25 C IC Ta=25℃ -10 -1 -0 0 -200 -200 -400 -400 -600 -600 -800 -800 -1000 -1000 -1200 -1200 -1400 -1400 PC —— 100 Cob 10 -0.1 -1600 -1600 -1 REVERSE VOLTAGE BASE-EMITER VOLTAGE VBE (mV) 1.50 Cib C Ta=100℃ -100 CAPACITANCE COLLECTOR CURRENT -4000 (mA) -1000 COLLECTOR POWER DISSIPATION PC (W) -4000 (mA) -1000 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— 1000 -1250 -10 V -20 (V) Ta 1.25 1.00 0.75 0.50 0.25 0.00 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 3 Rev. - 2.0 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.jscj-elec.com Dimensions In Millimeters Min Max 2.900 2.500 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 4 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 Rev. - 2.0